TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 40000 MHz |
Number of Pins | 4 Pin |
Case/Package | SOT-343-4 |
Number of Positions | 4 Position |
Polarity | NPN |
Power Dissipation | 200 mW |
Breakdown Voltage (Collector to Emitter) | 4.5 V |
Gain | 12.5 dB |
hFE Min | 110 @30mA, 3V |
Input Power (Max) | 200 mW |
DC Current Gain (hFE) | 110 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 200 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 2 mm |
Size-Width | 1.25 mm |
Size-Height | 0.9 mm |
Operating Temperature | 150℃ (TJ) |
The BFP 640 H6327 is a NPN low-noise Bipolar RF Transistor based on Infineon"s reliable high volume silicon germanium carbon hetero-junction bipolar technology. With its high linearity at currents as low as 10mA this device supports energy efficient designs. The typical transition frequency is approximately 40GHz, hence the device offers high power gain at frequencies up to 8GHz in amplifier applications. The device is housed in an easy to use plastic package with visible leads.
● Linear low-noise wide band transistor
● High linearity
● High transition frequency
● Low power consumption
● Easy to use
● Halogen-free
Infineon
28 Pages / 1.33 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
29 Pages / 1.1 MByte
Infineon
32 Pages / 1.19 MByte
Infineon
1 Pages / 0.13 MByte
Infineon
Trans RF BJT NPN 4V 0.05A Automotive 4Pin(3+Tab) SOT-343 T/R
Infineon
Trans GP BJT NPN 4V 0.05A Automotive 4Pin(3+Tab) SOT-343 T/R
Infineon
NPN RF-Trans 4V 50mA SOT343 **
Infineon
Trans RF BJT NPN 4V 0.05A 200mW Automotive 4Pin(3+Tab) SOT-343 T/R
Infineon
Trans RF BJT NPN 4.1V 0.05A Automotive 4Pin(3+Tab) SOT-343 T/R
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.