TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Frequency | 260 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -45.0 V |
Current Rating | -800 mA |
Case/Package | TO-226-3 |
Number of Positions | 3 Position |
Polarity | PNP |
Power Dissipation | 625 mW |
Gain Bandwidth Product | 260 MHz |
Breakdown Voltage (Collector to Emitter) | 45 V |
Continuous Collector Current | 0.8A |
hFE Min | 160 @100mA, 1V |
Input Power (Max) | 625 mW |
DC Current Gain (hFE) | 160 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 1500 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape |
Material | Silicon |
Size-Length | 5.2 mm |
Size-Width | 4.19 mm |
Size-Height | 5.33 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The BC327-25ZL1G is a PNP silicon Bipolar Amplifier Transistor, designed for use in linear and switching applications.
● 200°C/W Junction to Ambient Thermal Resistance
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Motorola
Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
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