TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Frequency | 100 MHz |
Number of Pins | 3 Pin |
Case/Package | TO-226-3 |
Number of Positions | 3 Position |
Power Dissipation | 625 mW |
Breakdown Voltage (Collector to Emitter) | 45 V |
hFE Min | 160 @100mA, 1V |
Input Power (Max) | 625 mW |
DC Current Gain (hFE) | 100 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 625 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Packaging | Bag |
Material | Silicon |
Operating Temperature | 150℃ (TJ) |
The BC32725BU is a PNP Epitaxial Silicon Transistor suitable for AF-driver stages, low-power output stages, switching and amplifier applications.
● Complement to BC337
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