| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 150 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -65.0 V |
| Current Rating | -100 mA |
| Case/Package | TO-92-3 |
| Number of Positions | 3 Position |
| Polarity | PNP |
| Power Dissipation | 500 mW |
| Breakdown Voltage (Collector to Emitter) | 65 V |
| Continuous Collector Current | 0.1A |
| hFE Min | 200 @2mA, 5V |
| Input Power (Max) | 500 mW |
| DC Current Gain (hFE) | 200 |
| Operating Temperature (Max) | 150 ℃ |
| Power Dissipation (Max) | 500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Box |
| Size-Length | 4.58 mm |
| Size-Width | 3.86 mm |
| Size-Height | 4.58 mm |
| Operating Temperature | 150℃ (TJ) |
The BC556BTA is a PNP epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications.
● High voltage VCEO
● Complement to BC546
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