TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 650 V |
Current Rating | 7.30 A |
Case/Package | TO-220-3 |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.54 Ω |
Polarity | N-Channel |
Power Dissipation | 83 W |
Threshold Voltage | 4.5 V |
Drain to Source Voltage (Vds) | 650 V |
Breakdown Voltage (Drain to Source) | 600 V |
Continuous Drain Current (Ids) | 7.30 A |
Rise Time | 40 ns |
Input Capacitance (Ciss) | 970pF @25V(Vds) |
Input Power (Max) | 83 W |
Fall Time | 20 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | 55 ℃ |
Power Dissipation (Max) | 83W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Not Recommended for New Designs |
Packaging | Tube |
Size-Length | 10 mm |
Size-Width | 4.4 mm |
Size-Height | 15.65 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The SPP07N60S5 is a 600V CoolMOS™ N-channel Power MOSFET features ultra-low gate current. It is suitable for general purpose applications.
● New revolutionary high voltage technology
● Extreme dV/dt rated
● Ultra low effective capacitance
● Qualified according to JEDEC for target applications
● Improved transconductance
● Innovative high voltage technology
● Worldwide best RDS (ON)
● Periodic avalanche rated
Infineon
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