| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 300 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 65.0 V |
| Current Rating | 100 mA |
| Case/Package | SOT-23-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 310 mW |
| Breakdown Voltage (Collector to Emitter) | 65 V |
| Continuous Collector Current | 0.1A |
| hFE Min | 200 @2mA, 5V |
| hFE Max | 800 |
| Input Power (Max) | 310 mW |
| DC Current Gain (hFE) | 200 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 310 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 2.92 mm |
| Size-Width | 1.3 mm |
| Size-Height | 0.93 mm |
| Operating Temperature | 150℃ (TJ) |
The BC846BMTF is a NPN epitaxial silicon Bipolar Transistor suitable for automatic insertion in thick and thin-film circuits, switching and amplifier applications.
● Complement to BC856
Fairchild
6 Pages / 0.29 MByte
Fairchild
16 Pages / 0.24 MByte
Fairchild
1 Pages / 0.06 MByte
Fairchild
5 Pages / 0.13 MByte
Fairchild
5 Pages / 0.16 MByte
Fairchild
1 Pages / 0.15 MByte
NXP
Trans GP BJT NPN 65V 0.1A Automotive 3Pin TO-236AB
Multicomp
Bipolar (BJT) Single Transistor, NPN, 65V, 100MHz, 0.25W(1/4W), 100mA, 110
Infineon
NPN Silicon AF Transistors
UTC
SWITCHING AND AMPLIFIER APPLICATIONS
Philips
Trans GP BJT NPN 65V 0.1A Automotive 3Pin TO-236AB
Nexperia
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
AUK Semiconductor
Trans GP BJT NPN 55V 0.1A 3Pin SOT-23
KEC(Korea Electronics)
EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)
Vishay Semiconductor
Small Signal Bipolar Transistor, 0.1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
