TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 250 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 45.0 V |
Current Rating | 100 mA |
Case/Package | SOT-23-3 |
Power Rating | 330 mW |
Number of Positions | 3 Position |
Polarity | NPN |
Power Dissipation | 330 mW |
Gain Bandwidth Product | 250 MHz |
Breakdown Voltage (Collector to Emitter) | 45 V |
Continuous Collector Current | 0.1A |
hFE Min | 420 |
hFE Max | 800 |
Input Power (Max) | 330 mW |
DC Current Gain (hFE) | 110 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 330 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Obsolete |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Size-Length | 2.9 mm |
Size-Width | 1.3 mm |
Size-Height | 1 mm |
Operating Temperature | 150℃ (TJ) |
The BC 847C E6327 is a NPN silicon AF Transistor features high current gain and low collector-emitter saturation voltage. This BC 847C E6327 silicon transistor is designed for AF input stages and drivers applications.
● Low noise between 30Hz and 15kHz
● AEC-Q101 Qualified
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Siemens Semiconductor
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
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