TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 150 MHz |
Number of Pins | 4 Pin |
Voltage Rating (DC) | -80.0 V |
Current Rating | -1.00 A |
Case/Package | TO-261-4 |
Power Rating | 2 W |
Polarity | PNP |
Power Dissipation | 2 W |
Breakdown Voltage (Collector to Emitter) | 80 V |
Continuous Collector Current | 1A |
hFE Min | 100 @150mA, 2V |
Input Power (Max) | 2 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 2 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Size-Length | 6.7 mm |
Size-Width | 3.7 mm |
Size-Height | 1.65 mm |
Operating Temperature | -65℃ ~ 150℃ (TJ) |
Design various electronic circuits with this versatile PNP BCP5316TA GP BJT from Diodes Zetex. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V.
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