| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 60 MHz |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | 20.0 V |
| Current Rating | 1.00 A |
| Case/Package | TO-261-4 |
| Number of Positions | 4 Position |
| Polarity | NPN |
| Power Dissipation | 1.5 W |
| Breakdown Voltage (Collector to Emitter) | 20 V |
| Continuous Collector Current | 1A |
| hFE Min | 85 @500mA, 1V |
| Input Power (Max) | 1.5 W |
| DC Current Gain (hFE) | 50 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 1.5 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 6.7 mm |
| Size-Width | 3.7 mm |
| Size-Height | 1.65 mm |
| Operating Temperature | -65℃ ~ 150℃ |
The BCP68T1G is a NPN bipolar Silicon Epitaxial Transistor designed for use in low voltage and high current applications. The device is housed in the package which is designed for medium power surface-mount applications. This package ensures level mounting, resulting in improved thermal conduction and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die.
● Can be soldered using wave or reflow
● AECQ101 qualified and PPAP capable
● PNP complement is BCP69T1
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Motorola
MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT
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