| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 50.0 V |
| Current Rating | 70.0 mA |
| Case/Package | SOT-23-3 |
| Power Dissipation | 200 mW |
| hFE Min | 70 |
| hFE Max | 70 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Gain Bandwidth | 100 MHz |
| Power Dissipation (Max) | 200 mW |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.9 mm |
| Size-Width | 1.3 mm |
| Size-Height | 1 mm |
| Operating Temperature | -65℃ ~ 150℃ |
If you require the digital form of a traditional BJT for your signal processing needs, then the NPN BCR 148 E6327 digital transistor from Infineon Technologies is for you. This product"s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 70@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 200 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This transistor has an operating temperature range of -65 °C to 150 °C. It is made in a single configuration.
Infineon
11 Pages / 0.84 MByte
Siemens Semiconductor
NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)
TT Electronics/BI
RESISTOR, METAL GLAZE/THICK FILM, 1W, 1%, 100ppm, 4870ohm, SURFACE MOUNT, 2512, CHIP
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