| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 250 MHz |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | 30.0 V |
| Current Rating | 100 mA |
| Case/Package | TO-253-4 |
| Number of Positions | 4 Position |
| Polarity | NPN |
| Power Dissipation | 300 mW |
| Breakdown Voltage (Collector to Emitter) | 30 V |
| Continuous Collector Current | 0.1A |
| hFE Min | 100 |
| DC Current Gain (hFE) | 520 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 300 mW |
| Voltage Rating | 30 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 2.9 mm |
| Size-Width | 1.3 mm |
| Size-Height | 1 mm |
The BCV 61C E6327 is a NPN silicon double Bipolar Transistor Array with good thermal coupling and VBE matching.
● To be used as a current mirror
● High current gain
● Low collector-emitter saturation voltage
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