| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | SOT-343-4 |
| Number of Positions | 4 Position |
| Polarity | NPN |
| Power Dissipation | 185 mW |
| Input Capacitance | 0.46 pF |
| Breakdown Voltage (Collector to Emitter) | 2.8 V |
| Gain | 21.5 dB |
| hFE Min | 110 @50mA, 1.5V |
| Input Power (Max) | 185 mW |
| DC Current Gain (hFE) | 110 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 185 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2 mm |
| Size-Width | 1.25 mm |
| Size-Height | 0.8 mm |
| Operating Temperature | 150℃ (TJ) |
The BFP 620 H7764 is a low-noise Bipolar RF Transistor provides outstanding performance for a wide range of wireless applications. It is designed based on Infineon"s reliable high volume silicon germanium technology. The device is ideal for CDMA and WLAN applications.
● High linearity transistor
● Collector design provides high linearity of 14.5dBm OP1dB for low voltage application
● Maximum stable gain
● Outstanding noise figure
● Halogen-free
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