| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 100 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 45.0 V |
| Current Rating | 1.00 A |
| Case/Package | SOT-23-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 350 mW |
| Breakdown Voltage (Collector to Emitter) | 45 V |
| hFE Min | 160 @100mA, 1V |
| hFE Max | 400 |
| Input Power (Max) | 350 mW |
| DC Current Gain (hFE) | 160 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 350 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.9 mm |
| Size-Width | 1.3 mm |
| Size-Height | 0.93 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The BCW66G is a NPN Bipolar Transistor designed for general purpose amplifier applications at collector currents to 500mA.
● Sourced from process 13
● -55 to 150°C Operating junction temperature range
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