| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Forward Voltage | 1.75V @10A |
| Reverse recovery time | 0 ns |
| Forward Current | 10 A |
| Max Forward Surge Current (Ifsm) | 470 A |
| Maximum Forward Voltage (Max) | 1.75V @10A |
| Forward Current (Max) | 10 A |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Junction Temperature | 150℃ (Max) |
| Junction Temperature (Max) | 175 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Each |
| Operating Temperature | -40℃ ~ 175℃ |
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
●Especially suited for use in specific bridge-less topologies, this dual 650 V rectifier will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.
●Key Features
● No or negligible reverse recovery
● Switching behavior independent of temperature
● Suited for specific bridge-less topologies
● High forward surge capability
● Insulated package:
● Capacitance: 7 pF
● Insulated voltage: 2500 V rms
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ST Microelectronics
STMICROELECTRONICS STPSC10TH13TI Silicon Carbide Schottky Diode, SIC, 650V Series, Dual Series, 650V, 10A, 28.5NC, TO-220AB
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