NGTB25N120IHLWG Datasheet PDF - ON Semiconductor

The NGTB25N120IHLWG is a 1200V (Insulated Gate Bipolar Transistor) IGBT features a robust and cost effective Field Stop (FS) trench construction. It provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co-packaged freewheeling diode with a low forward voltage.

● Low saturation voltage using trench with field-stop technology

● Low switching loss reduces system power dissipation

● Optimized for low case temperature in IH cooker application

● Low gate charge

● Low conduction loss

● ±20V Gate to emitter voltage

● 0.65°C/W IGBT thermal resistance, junction to case

● 2°C/W Diode thermal resistance, junction to case

● 40°C/W Thermal resistance, junction to ambient