| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 535 W |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Reverse recovery time | 240 ns |
| Input Power (Max) | 535 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 535 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 16.25 mm |
| Size-Width | 5.3 mm |
| Size-Height | 21.4 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
You won"t need to worry about any lagging in your circuit with this NGTB40N120FL2WG IGBT transistor from ON Semiconductor. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 652000 mW. This product comes in rail packaging to keep individual parts separated and protected. This device is made with field stop ii|trench technology. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. It is made in a single configuration.
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