| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 150 MHz |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 1.00 A |
| Case/Package | SOT-89-3 |
| Polarity | NPN |
| Power Dissipation | 1 W |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| Continuous Collector Current | 1A |
| hFE Min | 100 @150mA, 2V |
| hFE Max | 100 @150mA, 2V |
| Input Power (Max) | 1 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 1000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 4.6 mm |
| Size-Width | 2.6 mm |
| Size-Height | 1.6 mm |
| Operating Temperature | -65℃ ~ 150℃ (TJ) |
Implement this NPN BCX5516TA GP BJT from Diodes Zetex to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
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