TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 250 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -45.0 V |
Current Rating | -100 mA |
Case/Package | SOT-23-3 |
Polarity | PNP |
Power Dissipation | 330 mW |
Breakdown Voltage (Collector to Emitter) | 45 V |
Continuous Collector Current | 0.1A |
hFE Min | 380 @2mA, 5V |
hFE Max | 630 |
Input Power (Max) | 330 mW |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 330 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Operating Temperature | 150℃ (TJ) |
Summary of Features:
● High current gain
● Low collector-emitter saturation voltage
● Low noise between 30 Hz and 15 kHz
● Complementary types: BCW60, BCX70 (NPN)
● Pb-free (RoHS compliant) package
● Qualified according AEC Q107
Infineon
11 Pages / 0.54 MByte
Infineon
34 Pages / 0.2 MByte
Infineon
1 Pages / 0.14 MByte
Infineon
Trans GP BJT PNP 45V 0.1A 3Pin SOT-23 T/R
Infineon
PNP TRANSISTOR 45V 0,1A SOT23 **
Siemens Semiconductor
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
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