TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 100 V |
Current Rating | 6.00 A |
Case/Package | TO-220-3 |
Number of Positions | 3 Position |
Polarity | PNP |
Power Dissipation | 65 W |
Breakdown Voltage (Collector to Emitter) | 100 V |
hFE Min | 15 @3A, 4V |
Input Power (Max) | 65 W |
DC Current Gain (hFE) | 30 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 65000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Not Recommended for New Designs |
Packaging | Tube |
Material | Silicon |
Operating Temperature | 150℃ (TJ) |
Features
●■ STmicroelectronics PREFERRED SALESTYPES
●Applications
●■ SWITCHING APPLICATIONS
●■ LINEAR APPLICATIONS
●Description
●The BD243C device is a silicon Epitaxial-Base NPN transistor mounted in Jedec TO-220 plastic
●package. It’s intend for use in medium power linear and switching applications. The complementary PNP type is BD244C.
ST Microelectronics
10 Pages / 0.32 MByte
ST Microelectronics
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ST Microelectronics
6 Pages / 0.09 MByte
ST Microelectronics
25 Pages / 0.25 MByte
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