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IXTQ82N25P
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IXTQ82N25P Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:MOSFETs
Case Package:TO-3-3
Description:TO-3P N-CH 250V 82A
Documentation:IXTQ82N25P Datasheet (5 Pages)
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IXTQ82N25P Datasheet PDF (5 Pages)
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IXTQ82N25P Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Case/PackageTO-3-3
Number of Channels1 Channel
Drain to Source Resistance (on) (Rds)35 mΩ
PolarityN-CH
Power Dissipation500 W
Drain to Source Voltage (Vds)250 V
Breakdown Voltage (Drain to Source)250 V
Continuous Drain Current (Ids)82A
Rise Time20 ns
Input Capacitance (Ciss)4800pF @25V(Vds)
Input Power (Max)500 W
Fall Time22 ns
Operating Temperature (Max)150 ℃
Operating Temperature (Min)55 ℃
Power Dissipation (Max)500W (Tc)
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IXTQ82N25P Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
Size-Length15.8 mm
Size-Width4.9 mm
Size-Height20.3 mm
Operating Temperature-55℃ ~ 150℃ (TJ)
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IXTQ82N25P Documents

IXTQ82N25P Datasheet
IXYS Semiconductor
5 Pages / 0.14 MByte
IXTQ82N25P Other Datasheet PDF
IXYS Semiconductor
5 Pages / 0.28 MByte

IXTQ82N25 Documents

IXTQ82N25P Datasheet PDF
IXYS Semiconductor
TO-3P N-CH 250V 82A
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