| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247 |
| Number of Positions | 3 Position |
| Polarity | PNP, P-Channel |
| Power Dissipation | 125 W |
| DC Current Gain (hFE) | 25 |
| Operating Temperature (Max) | 150 ℃ |
The BD250C is a -100V PNP Complementary Power Transistor designed for use in general purpose power amplifier and switching applications.
● Collector-base voltage(Vcbo = 115V)
● Emitter-base voltage(Vebo = 5V)
Multicomp
4 Pages / 0.58 MByte
Bourns J.W. Miller
Pnp Silicon Power Transistors
EXEL
EEPROM, 2KX8, 250ns, Parallel, CMOS, PQCC32,
ON Semiconductor
LDO Regulator, 150 mA, Low Dropout, Low Iq 5V, SOIC-14 NB, 2500-REEL
TI
25A, 45V, PNP, Si, POWER TRANSISTOR, TO-3P, 3 PIN
Sanyo Semiconductor
Bridge Rectifier Diode, 1 Phase, 25A, 600V V(RRM), Silicon, PLASTIC PACKAGE-4
KEMET Corporation
Aluminum Electrolytic Capacitor, Polarized, Aluminum (wet), 250V, 20% +Tol, 20% -Tol, 330uF, Through Hole Mount, CAN, ROHS COMPLIANT
Mospec
POWER TRANSISTORS(25A,125W)y
Abracon
HCSL Output Clock Oscillator, 50MHz Nom,
ADAM Technologies
Barrier Strip Terminal Block, 20A, 1 Deck(s)
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
