| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -60.0 V |
| Current Rating | -4.00 A |
| Case/Package | TO-126-3 |
| Halogen Free Status | Halogen Free |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 40 W |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| Continuous Collector Current | 4A |
| hFE Min | 750 @1.5A, 3V |
| Input Power (Max) | 40 W |
| DC Current Gain (hFE) | 750 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 40000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The BD677G is a NPN bipolar medium-power Darlington Transistor for use as output device in complementary general-purpose amplifier applications.
● Monolithic construction
● Complementary with BD678
● Equivalent to MJE 800
ON Semiconductor
5 Pages / 0.12 MByte
ON Semiconductor
8 Pages / 0.23 MByte
ON Semiconductor
2 Pages / 0.03 MByte
ON Semiconductor
4 Pages / 0.07 MByte
ST Microelectronics
Trans Darlington NPN 60V 4A 40000mW 3Pin(3+Tab) SOT-32 Tube
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MULTICOMP BD677 Bipolar (BJT) Single Transistor, Darlington, NPN, 60V, 40W, 4A, 750
Central Semiconductor
Trans Darlington NPN 60V 4A 40000mW 3Pin(3+Tab) TO-126 Box
Continental Device
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3
Samsung
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
National Semiconductor
TRANSISTOR,BJT,DARLINGTON,NPN,60V V(BR)CEO,4A I(C),TO-126
Motorola
Transistor NPN Darlington BD677 MOTOROLA Ampere=4 TO126
Fairchild
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
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