| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 65 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -25.0 V |
| Current Rating | -5.00 A |
| Case/Package | TO-252-3 |
| Number of Positions | 3 Position |
| Polarity | PNP, P-Channel |
| Power Dissipation | 1.4 W |
| Gain Bandwidth Product | 65 MHz |
| Breakdown Voltage (Collector to Emitter) | 25 V |
| Thermal Resistance | 10℃/W (RθJC) |
| Continuous Collector Current | 5A |
| hFE Min | 45 @2A, 1V |
| Input Power (Max) | 1.4 W |
| DC Current Gain (hFE) | 3 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 1400 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.38 mm |
| Operating Temperature | -65℃ ~ 150℃ |
The MJD210G is a 5A PNP bipolar Power Transistor designed for low voltage, low power, high gain audio amplifier applications.
● Complementary device
● High current-gain - bandwidth product (fT = 65MHz minimum @ IC = 100mA DC)
● AEC-Q101 qualified and PPAP capable
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