| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -45.0 V |
| Current Rating | -4.00 A |
| Case/Package | TO-126-3 |
| Halogen Free Status | Halogen Free |
| Number of Positions | 3 Position |
| Polarity | PNP |
| Power Dissipation | 40 W |
| Breakdown Voltage (Collector to Emitter) | 45 V |
| Continuous Collector Current | 4A |
| hFE Min | 750 @1.5A, 3V |
| Input Power (Max) | 40 W |
| DC Current Gain (hFE) | 750 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 40000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Size-Length | 7.74 mm |
| Size-Width | 2.66 mm |
| Size-Height | 11.04 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The BD676G is a -45V Silicon PNP Bipolar Darlington Plastic Medium Power Transistor that can be used as output devices in complementary general purpose amplifier applications. The transistor has monolithic construction.
● High DC current gain
● Collector-base voltage (Vcbo = 45V)
● Emitter-base voltage (Vcbo = 5V)
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