| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 80.0 V |
| Current Rating | 4.00 A |
| Case/Package | TO-126-3 |
| Halogen Free Status | Halogen Free |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 40 W |
| Breakdown Voltage (Collector to Emitter) | 80 V |
| Continuous Collector Current | 4A |
| hFE Min | 750 |
| Input Power (Max) | 40 W |
| DC Current Gain (hFE) | 750 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 40000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Size-Length | 7.74 mm |
| Size-Width | 2.66 mm |
| Size-Height | 11.04 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The BD679AG is a NPN bipolar medium-power Darlington Transistor for use as output device in complementary general-purpose amplifier applications.
● Monolithic construction
● Complementary with BD680A
● Equivalent to MJE 802
ON Semiconductor
5 Pages / 0.12 MByte
ON Semiconductor
8 Pages / 0.23 MByte
ON Semiconductor
2 Pages / 0.1 MByte
ON Semiconductor
13 Pages / 0.34 MByte
ST Microelectronics
Trans Darlington NPN 80V 4A 40000mW 3Pin(3+Tab) SOT-32 Tube
Multicomp
MULTICOMP BD679 Bipolar (BJT) Single Transistor, Darlington, NPN, 60V, 40W, 4A, 750
Central Semiconductor
Trans Darlington NPN 80V 4A 40000mW 3Pin(3+Tab) TO-126 Box
Continental Device
40W Darlington NPN Plastic Leaded Transistor. 80V Vceo, 4A Ic, 750 hFE. Complementary BD680
Fairchild
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Samsung
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
National Semiconductor
TRANSISTOR,BJT,DARLINGTON,NPN,80V V(BR)CEO,4A I(C),TO-126
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