TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 100 V |
Current Rating | 4.00 A |
Case/Package | TO-126-3 |
Power Rating | 40 W |
Output Voltage | 100 V |
Output Current | 4 A |
Number of Positions | 3 Position |
Input Current | 0.1 A |
Power Dissipation | 40 W |
Breakdown Voltage (Collector to Emitter) | 100 V |
hFE Min | 750 |
Input Power (Max) | 40 W |
DC Current Gain (hFE) | 750 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 40000 mW |
Input Voltage | 5 V |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 7.8 mm |
Size-Width | 2.7 mm |
Size-Height | 10.8 mm |
Operating Temperature | 150℃ (TJ) |
DESCRIPTION
●The BD677, BD677A, BD679, BD679A and BD681 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration mounted in Jedec SOT-32 plastic package. They are intended for use in medium power linar and switching applications The complementary PNP types are BD678, BD678A, BD680, BD680A and BD682 respectively.
ST Microelectronics
12 Pages / 0.36 MByte
ST Microelectronics
13 Pages / 0.35 MByte
ST Microelectronics
4 Pages / 0.07 MByte
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