| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 4.00 A |
| Case/Package | TO-126-3 |
| Power Rating | 40 W |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 40 W |
| Breakdown Voltage (Collector to Emitter) | 100 V |
| Continuous Collector Current | 4A |
| hFE Min | 750 @1.5A, 3V |
| Input Power (Max) | 40 W |
| DC Current Gain (hFE) | 750 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 40 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Size-Length | 8 mm |
| Size-Width | 3.25 mm |
| Size-Height | 11 mm |
| Operating Temperature | 150℃ (TJ) |
The BD681S is a NPN Epitaxial Silicon Transistor designed for medium power linear and switching applications.
● Complement to BD682
● Medium power Darlington TR
Fairchild
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