| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 50 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -60.0 V |
| Current Rating | -4.00 A |
| Case/Package | TO-126-3 |
| Number of Positions | 3 Position |
| Polarity | PNP |
| Power Dissipation | 15 W |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| Continuous Collector Current | 4A |
| hFE Min | 40 @200mA, 3V |
| Input Power (Max) | 15 W |
| DC Current Gain (hFE) | 40 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 15000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Material | Silicon |
| Size-Length | 7.74 mm |
| Size-Width | 2.66 mm |
| Size-Height | 11.04 mm |
| Operating Temperature | -65℃ ~ 150℃ (TJ) |
The BD788G is a 4A PNP bipolar complementary silicon Power Transistor is designed for lower power audio amplifier and low current, high speed switching applications.
● Complementary device
● Low collector-emitter sustaining voltage VCEO(sus) 60VDC minimum
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complementary plastic silicon power transistor
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