| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | 300 V |
| Current Rating | 500 mA |
| Case/Package | TO-252-3 |
| Number of Positions | 4 Position |
| Polarity | NPN |
| Power Dissipation | 1.56 W |
| Breakdown Voltage (Collector to Emitter) | 300 V |
| Continuous Collector Current | 0.5A |
| hFE Min | 30 @50mA, 10V |
| Input Power (Max) | 1.56 W |
| DC Current Gain (hFE) | 30 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 1560 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.38 mm |
| Operating Temperature | -65℃ ~ 150℃ (TJ) |
The NPN MJD340T4G general purpose bipolar junction transistor, developed by ON Semiconductor, is the perfect solution for your high-current density needs. This bipolar junction transistor"s maximum emitter base voltage is 3 V. Its maximum power dissipation is 1560 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 3 V.
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