| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 10.0 A |
| Case/Package | TO-247-3 |
| Power Rating | 125 W |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 125 W |
| Breakdown Voltage (Collector to Emitter) | 100 V |
| Continuous Collector Current | 10A |
| hFE Min | 1000 @5A, 4V |
| Input Power (Max) | 125 W |
| DC Current Gain (hFE) | 1000 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 125000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.2 mm |
| Size-Width | 4.9 mm |
| Size-Height | 12.2 mm |
| Operating Temperature | -65℃ ~ 150℃ (TJ) |
The BDV65BG is a 100V Silicon NPN Bipolar Darlington Plastic Power Transistor that can be used as output devices in complementary general purpose amplifier applications. The transistor has monolithic construction with built-in base-emitter shunt resistor.
● High DC current gain
● Collector-base voltage (Vcbo = 100V)
● Emitter-base voltage (Vcbo = 5V)
ON Semiconductor
7 Pages / 0.1 MByte
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2 Pages / 0.05 MByte
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5 Pages / 0.45 MByte
Bourns J.W. Miller
Power Bipolar Transistor, 12A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC, FM-3
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12A, 60V, NPN, Si, POWER TRANSISTOR, TO-218
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10 A, 100 V NPN Darlington Bipolar Power Transistor, TO-247, 30-TUBE
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