| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 15.0 A |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 85 W |
| Breakdown Voltage (Collector to Emitter) | 100 V |
| Continuous Collector Current | 15A |
| hFE Min | 1000 @5A, 4V |
| Input Power (Max) | 85 W |
| DC Current Gain (hFE) | 1000 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Gain Bandwidth | 4MHz (Min) |
| Power Dissipation (Max) | 85000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.28 mm |
| Size-Width | 4.82 mm |
| Size-Height | 9.28 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The BDW42G is a 100V Silicon NPN Bipolar Complementary Darlington Power Transistor designed for general purpose and low speed switching applications. The transistor has monolithic construction with built-in base-emitter shunt resistor.
● High DC current gain
● Collector-emitter sustaining voltage(Vce (sus) = 100VDC minimum)
● Low collector-emitter saturation voltage
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Darlington Complementary Silicon Power Transistors
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