| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -100 V |
| Current Rating | -12.0 A |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Polarity | PNP |
| Power Dissipation | 33 W |
| Breakdown Voltage (Collector to Emitter) | 100 V |
| Continuous Collector Current | 12A |
| hFE Min | 100 |
| Input Power (Max) | 33 W |
| DC Current Gain (hFE) | 1000 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 33 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 16.4 mm |
| Operating Temperature | 150℃ (TJ) |
The BDW94CFP is a PNP complementary epitaxial-base silicon Power Transistor with monolithic Darlington configuration mounted in a fully moulded insulated package. It is intended for use in power linear and switching applications.
● Integrated anti-parallel collector-emitter diode
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