| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 30 mΩ |
| Power Dissipation | 1.9 W |
| Threshold Voltage | 700 mV |
| Drain to Source Voltage (Vds) | 20 V |
| Breakdown Voltage (Drain to Source) | 20 V |
| Rise Time | 13 ns |
| Input Capacitance (Ciss) | 460pF @20V(Vds) |
| Input Power (Max) | 1.9 W |
| Fall Time | 13 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3 mm |
| Size-Width | 1.4 mm |
| Size-Height | 1 mm |
The PMV30UN,215 is a N-channel enhancement-mode ultra-low level FET in a plastic package using TrenchMOS® technology. It is suitable for use in battery management and high-speed switching applications.
● Suitable for high frequency applications due to fast switching characteristics
● Surface-mount package
● -55 to 150°C Junction temperature range
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