| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 70 W |
| Number of Positions | 3 Position |
| Polarity | PNP |
| Power Dissipation | 70 W |
| Breakdown Voltage (Collector to Emitter) | 100 V |
| hFE Min | 750 @3A, 3V |
| Input Power (Max) | 70 W |
| DC Current Gain (hFE) | 750 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 70000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 9.15 mm |
| Operating Temperature | 150℃ (TJ) |
The BDX34C is a -100V Silicon Epitaxial Base PNP Power Transistor in monolithic Darlington configuration. It is intended for use in power linear and switching applications. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses.
● Complementary to the BDX33C
● Well-controlled hFE parameter for increased reliability
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