| TYPE | DESCRIPTION |
|---|
| Frequency | 800 MHz |
| Number of Pins | 4 Pin |
| Current Rating | 30 mA |
| Case/Package | SOT-343 |
| Polarity | N-Channel |
| Power Dissipation | 200 mW |
| Drain to Source Voltage (Vds) | 7.00 V |
| Continuous Drain Current (Ids) | 30.0 mA |
| Test Current | 12 mA |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 200 mW |
| Voltage Rating | 7 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tape & Reel (TR) |
| Size-Height | 1 mm |
Do you need a transistor that will operate at high frequencies? Then this BF1101WR,115 RF amplifier from NXP Semiconductors is perfect for you! Its maximum power dissipation is 200 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. Its maximum frequency is 1000 MHz. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 150 °C. This N channel RF power MOSFET operates in enhancement mode.
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