| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 200 MHz |
| Number of Pins | 4 Pin |
| Current Rating | 40 mA |
| Case/Package | TO-253-4 |
| Number of Positions | 4 Position |
| Polarity | N-Channel |
| Power Dissipation | 200 mW |
| Drain to Source Voltage (Vds) | 20 V |
| Continuous Drain Current (Ids) | 40.0 mA |
| Test Current | 15 mA |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 200 mW |
| Voltage Rating | 20 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 3 mm |
| Size-Width | 1.4 mm |
| Size-Height | 1 mm |
| Operating Temperature | -65℃ ~ 150℃ |
This BF992,215 RF amplifier from NXP Semiconductors works in radio frequency environments and can be used to amplify and switch between electronic signals. Its maximum power dissipation is 200 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This N channel RF power MOSFET operates in depletion mode. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 150 °C.
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