BFG10 Datasheet PDF - NXP

NPN 2 GHz RF power transistor FEATURES • High power gain • High efficiency • Small size discrete power amplifier • 1.9 GHz operating area • Gold metallization ensures excellent reliability. APPLICATIONS • Common emitter class-AB operation in hand-held radio equipment at 1.9 GHz. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in plastic, 4-pin dual-emitter SOT143 package.