| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 9000 MHz |
| Number of Pins | 4 Pin |
| Case/Package | TO-253-4 |
| Number of Positions | 4 Position |
| Polarity | NPN |
| Power Dissipation | 300 mW |
| Breakdown Voltage (Collector to Emitter) | 15 V |
| hFE Min | 60 @20mA, 6V |
| Input Power (Max) | 300 mW |
| DC Current Gain (hFE) | 120 |
| Operating Temperature (Max) | 175 ℃ |
| Power Dissipation (Max) | 300 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Height | 1 mm |
| Operating Temperature | 175℃ (TJ) |
The BFG520 is a NPN silicon epitaxial planar Wideband Transistor encapsulated in a plastic envelope. The device is intended for applications in the RF frontend in the GHz range, such as analogue and digital cellular telephones, cordless telephones (CT1, CT2, DECT), radar detectors, pagers and satellite TV tuners (SATV) and repeater amplifiers in fibre-optic systems.
● High power gain
● Low noise figure
● High transition frequency
● Gold metallization ensures excellent reliability
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