| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | SMD-4 |
| Number of Positions | 4 Position |
| Power Dissipation | 185 mW |
| Input Capacitance | 0.45 pF |
| Breakdown Voltage (Collector to Emitter) | 2.8 V |
| Gain | 21dB ~ 10dB |
| hFE Min | 110 @50mA, 1.5V |
| Input Power (Max) | 185 mW |
| DC Current Gain (hFE) | 110 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 185 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 1.4 mm |
| Size-Width | 0.8 mm |
| Size-Height | 0.55 mm |
| Operating Temperature | 150℃ (TJ) |
● High gain low noise RF transistor
● Based on Infineon"s reliable high volume Silicon Germanium technology
● Outstanding noise figure NFmin = 0.7 dB at 1.8 GHz Outstanding noise figure NFmin = 1.3 dB at 6 GHz
● Maximum stable gain
● Gms = 21 dB at 1.8 GHz
● Gma = 10 dB at 6 GHz
● Pb-free (RoHS compliant) and halogen-free thin small flat package (1.4 x 0.8 x 0.59 mm) with visible leads
● Qualification report according to AEC-Q101 available
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RF Small Signal Bipolar Transistor, 0.08A I(C), 1Element, C Band, Silicon Germanium, NPN, 1.40 X 0.8MM, 0.59MM HEIGHT, ROHS COMPLIANT, TSFP-4
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