| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | SOT-343-4 |
| Number of Positions | 4 Position |
| Power Dissipation | 160 mW |
| Input Capacitance | 0.7 pF |
| Breakdown Voltage (Collector to Emitter) | 4.7 V |
| Gain | 7dB ~ 30dB |
| hFE Min | 110 @30mA, 3V |
| Input Power (Max) | 200 mW |
| DC Current Gain (hFE) | 250 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 200 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2 mm |
| Size-Width | 1.25 mm |
| Size-Height | 0.9 mm |
| Operating Temperature | 150℃ (TJ) |
The BFP 640ESD H6327 is a robust low-noise NPN Bipolar RF Transistor based on Infineon"s reliable high volume silicon germanium carbon hereto junction bipolar technology. The device is especially suited for mobile applications in which low power consumption is a key requirement. The typical transition frequency is approximately 45GHz, hence the device offers high power gain at frequencies up to 10GHz in amplifier applications. The transistor is fitted with internal protection circuits, which enhance the robustness against electrostatic discharge (ESD) and high levels of RF input power.
● 2kV ESD robustness (HBM) due to integrated protection circuits
● High maximum RF input power of 21dBm
● Easy to use
● Halogen-free
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NPN RF-Trans 4,1V 50mA SOT343 **
Infineon
Trans RF BJT NPN 4.1V 0.05A Automotive 4Pin(3+Tab) SOT-343 T/R
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