| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 8000 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 12.0 V |
| Current Rating | 65.0 mA |
| Case/Package | SOT-23-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 580 mW |
| Input Capacitance | 2.25 pF |
| Breakdown Voltage (Collector to Emitter) | 12 V |
| Gain | 10dB ~ 15dB |
| hFE Min | 70 @30mA, 8V |
| Input Power (Max) | 580 mW |
| DC Current Gain (hFE) | 70 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 580 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 2.9 mm |
| Size-Width | 1.3 mm |
| Size-Height | 1 mm |
| Operating Temperature | 150℃ (TJ) |
The BFR 193 E6327 is a NPN low-noise silicon Bipolar RF Transistor for low noise, high-gain amplifiers up to 2GHz. The device is suitable for various applications like cellular and cordless phones, DECT, Tuners, FM and RF modems.
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