| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 14000 MHz |
| Number of Pins | 3 Pin |
| Case/Package | PG-TSFP-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 210 mW |
| Input Capacitance | 0.4 pF |
| Breakdown Voltage (Collector to Emitter) | 9 V |
| Gain | 15.5 dB |
| hFE Min | 90 @15mA, 3V |
| Input Power (Max) | 210 mW |
| DC Current Gain (hFE) | 90 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 210 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 1.2 mm |
| Size-Width | 0.8 mm |
| Size-Height | 0.55 mm |
| Operating Temperature | 150℃ (TJ) |
The BFR 360F H6327 is a NPN Silicon RF Transistor for low-noise amplifier for low current applications. The device is suitable for amplifier and oscillator applications in RF front-end. The collector design of the device supports 5V supply voltage.
● Low noise figure
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