TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 4000 MHz |
Number of Pins | 3 Pin |
Case/Package | SOT-323-3 |
Power Rating | 300 mW |
Number of Positions | 3 Position |
Polarity | PNP, P-Channel |
Power Dissipation | 300 mW |
Breakdown Voltage (Collector to Emitter) | 15 V |
Gain | 17 dB |
hFE Min | 20 @15mA, 10V |
hFE Max | 20 |
Input Power (Max) | 300 mW |
DC Current Gain (hFE) | 50 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 300 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Size-Length | 2.2 mm |
Size-Width | 1.35 mm |
Size-Height | 1 mm |
Operating Temperature | 150℃ (TJ) |
This BFT92W,115 RF amplifier from NXP Semiconductors offers superior characteristics as compared to RF MOSFETS allowing it to operate at higher RF frequencies. This RF transistor has an operating temperature range of -65 °C to 150 °C.
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