TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 11000 MHz |
Number of Pins | 4 Pin |
Case/Package | TO-253-4 |
Number of Positions | 4 Position |
Power Dissipation | 450 mW |
Input Capacitance | 1.11 pF |
Breakdown Voltage (Collector to Emitter) | 12 V |
Gain | 21.5 dB |
hFE Min | 60 @15mA, 8V |
Input Power (Max) | 450 mW |
DC Current Gain (hFE) | 60 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -40 ℃ |
Power Dissipation (Max) | 450 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Operating Temperature | -40℃ ~ 150℃ (TJ) |
With this BFU550XAR RF amplifier from NXP Semiconductors your circuit will be operating at high RF frequencies. This RF transistor has an operating temperature range of -40 °C to 150 °C.
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