| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | TO-261-4 |
| Number of Positions | 4 Position |
| Power Dissipation | 2 W |
| Input Capacitance | 3.9 pF |
| Gain Bandwidth Product | 8.5 GHz |
| Breakdown Voltage (Collector to Emitter) | 12 V |
| Gain | 8 dB |
| hFE Min | 60 @80mA, 8V |
| hFE Max | 130 |
| Input Power (Max) | 2 W |
| DC Current Gain (hFE) | 60 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 2000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Operating Temperature | -40℃ ~ 150℃ (TJ) |
With this BFU590GX RF amplifier from NXP Semiconductors your circuit will be operating at high RF frequencies. This RF transistor has an operating temperature range of -40 °C to 150 °C.
NXP
Trans RF BJT NPN 16V 0.3A 2000mW Automotive 4Pin(3+Tab) SOT-89 T/R
NXP
Trans RF BJT NPN 16V 0.3A 2000mW Automotive 4Pin(3+Tab) SC-73 T/R
NXP
Trans GP BJT NPN 16V 0.3A Automotive 4Pin(3+Tab) SOT-89
NXP
NPN wideband silicon RF transistor
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
