| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 60.0 A |
| Case/Package | TO-263-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.016 Ω |
| Polarity | N-Channel |
| Power Dissipation | 110 W |
| Threshold Voltage | 1 V |
| Drain to Source Voltage (Vds) | 60 V |
| Breakdown Voltage (Drain to Source) | 60 V |
| Breakdown Voltage (Gate to Source) | ±15.0 V |
| Continuous Drain Current (Ids) | 60.0 A |
| Rise Time | 220 ns |
| Input Capacitance (Ciss) | 2000pF @25V(Vds) |
| Input Power (Max) | 110 W |
| Fall Time | 30 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 110W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10.4 mm |
| Size-Width | 9.35 mm |
| Size-Height | 4.6 mm |
| Operating Temperature | -65℃ ~ 175℃ (TJ) |
The STB60NF06LT4 is a STripFET™ II N-channel Power MOSFET developed using STMicroelectronics unique Single Feature Size™ strip-based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
● Low threshold drive
● -55 to 175°C Operating junction temperature range
ST Microelectronics
16 Pages / 0.49 MByte
ST Microelectronics
17 Pages / 0.8 MByte
ST Microelectronics
10 Pages / 0.75 MByte
ST Microelectronics
N-CHANNEL 60V - 0.012Ω - 60A D2PAK/TO-220/TO-220FP STRIPFET II POWER MOSFET
ST Microelectronics
Trans MOSFET N-CH 60V 60A 3Pin(2+Tab) D2PAK T/R
ST Microelectronics
N-CHANNEL 60V - 0.012Ω - 60A TO-220/TO-220FP/D2PAK STripFET⑩ II POWER MOSFET
ST Microelectronics
N-channel 60V - 0.014Ω- 60A - D2PAK/I2PAK STripFET™ II Power MOSFET
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
