BLT80,115 Datasheet PDF - NXP

Manufacturer:	NXP
Category:	BJTs
Case Package:	TO-261-4
Description:	Trans RF BJT NPN 10V 0.25A 2000mW 4Pin(3+Tab) SC-73 T/R
Documentation:	BLT80,115 Datasheet (12 Pages)Package Outline Dimension on9 Page BLT80,115 Application Note (12 Pages)
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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BLT80,115 Specifications

TYPE	DESCRIPTION
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-261-4
Polarity	NPN
Power Dissipation	2 W
Output Power	0.8 W
Breakdown Voltage (Collector to Emitter)	10 V
hFE Min	25 @150mA, 5V
Input Power (Max)	2 W
DC Current Gain (hFE)	25
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	2000 mW