TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 60.0 V |
Current Rating | 500 mA |
Case/Package | TO-92-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 1.2 Ω |
Polarity | N-Channel |
Power Dissipation | 830 mW |
Threshold Voltage | 2.1 V |
Drain to Source Voltage (Vds) | 60 V |
Breakdown Voltage (Drain to Source) | 60.0 V |
Breakdown Voltage (Gate to Source) | ±20.0 V |
Continuous Drain Current (Ids) | 500 mA |
Input Capacitance (Ciss) | 40pF @10V(Vds) |
Input Power (Max) | 830 mW |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 830 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Packaging | Bulk |
Size-Length | 5.2 mm |
Size-Width | 4.19 mm |
Size-Height | 5.33 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The BS170 is a N-channel enhancement mode Field Effect Transistor is produced using Fairchild"s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching performance. It can be used in most applications requiring up to 500mA DC. It is also suitable for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications.
● Voltage Controlled Small Signal Switch
● Rugged and Reliable
● High Saturation Current Capability
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