TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | PG-TDSON-8 |
Power Rating | 69 W |
Number of Channels | 1 Channel |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 0.0025 Ω |
Polarity | N-Channel |
Power Dissipation | 69 W |
Threshold Voltage | 1 V |
Drain to Source Voltage (Vds) | 30 V |
Breakdown Voltage (Drain to Source) | 30 V |
Continuous Drain Current (Ids) | 23A |
Rise Time | 5.2 ns |
Input Capacitance (Ciss) | 4300pF @15V(Vds) |
Fall Time | 4.8 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | 55 ℃ |
Power Dissipation (Max) | 2.5W (Ta), 69W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 5.9 mm |
Size-Width | 5.15 mm |
Size-Height | 1.27 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The BSC030N03LS G is a 30V N-channel Power MOSFET for switched mode power supplies (SMPS). OptiMOS™ 30V MOSFET sets new standards in power density and energy efficiency. This is tailored to the needs of power management in notebook by improved EMI behaviour as well as increased battery life.
● Fast switching MOSFET
● Increased battery lifetime
● Improved EMI behaviour making external snubber networks obsolete
● Saving space
● Reducing power losses
● Superior thermal resistance
Infineon
10 Pages / 0.37 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
7 Pages / 0.07 MByte
Infineon
N-Channel 30V 100A 3 mO 55NC SMT OptiMOS Power Mosfet - TDSON-8
Infineon
Trans MOSFET N-CH 30V 23A 8Pin TDSON EP
Infineon
N-channel Mosfet 20v300v Power Transistor Power Mosfet
Infineon
Power Field-Effect Transistor, 21A I(D), 30V, 0.0038Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.