| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | PG-TDSON-8 |
| Power Rating | 66 W |
| Number of Channels | 1 Channel |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.0103 Ω |
| Polarity | N-Channel |
| Power Dissipation | 66 W |
| Threshold Voltage | 2.8 V |
| Input Capacitance | 1430 pF |
| Drain to Source Voltage (Vds) | 80 V |
| Continuous Drain Current (Ids) | 11A |
| Rise Time | 18 ns |
| Input Capacitance (Ciss) | 1430pF @40V(Vds) |
| Fall Time | 4 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.5W (Ta), 66W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 5.35 mm |
| Size-Width | 5.15 mm |
| Size-Height | 1.1 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The BSC123N08NS3 G is a N-channel Power MOSFET with performance leading benchmark OptiMOS™ technology. It is the market leader in highly efficient solutions for power generation, power supply and power consumption applications.
● Optimized technology for DC-to-DC converters
● Excellent gate charge x RDS (ON) product (FOM)
● Superior thermal resistance
● Dual sided cooling
● Low parasitic inductance
● Low profile
● Normal level
● 100% avalanche tested
● Qualified according to JEDEC for target applications
● Halogen-free, Green device
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